STD90N4F3 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STD90N4F3

N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET™ III Power MOSFET

STMicroelectronics 

STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3

Electrical characteristics

Table 6.

Symbol

Switching on/off (inductive load)

Parameter

Test conditions

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off delay time

Fall time

VDD=20 V, ID= 40 A,

RG=4.7 Ω, VGS=10 V

(see Figure 16)

VDD=20 V, ID= 40 A,

RG=4.7 Ω, VGS=10 V

(see Figure 16)

Min. Typ. Max. Unit

15

-

50

ns

-

ns

40

-

15

ns

-

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=80 A, VGS=0

ISD=80 A,

di/dt = 100 A/µs,

VDD=30 V, Tj=150°C

(see Figure 15)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

80 A

-

320 A

-

1.5 V

45

ns

-

60

nC

2.8

A

Doc ID 14212 Rev 3

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