STD3NK60Z-1(2018) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STD3NK60Z-1
(Rev.:2018)

N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages

STMicroelectronics 

STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP

Electrical ratings

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

D2PAK, TO-220

VDS

Drain-source voltage

VGS

Gate-source voltage

ID

Drain current (continuous) at TC = 25 °C

2.4

ID

Drain current (continuous) at TC = 100 °C

1.51

IDM (2)

Drain current (pulsed)

9.6

PTOT

Total dissipation at TC = 25 °C

45

ESD

Gate-source human body model

(R = 1.5 kΩ, C = 100 pF)

VISO

Insulation withstand voltage (RMS)

from all three leads to external heat-sink

(t = 1 s, TC = 25 °C)

dv/dt (3) Peak diode recovery voltage slope

Tj

Operating junction temperature range

Tstg

Storage temperature range

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 2.4 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Value

TO-220FP

600

±30

2.4 (1)

1.51 (1)

9.6 (1)

20

2.1

2.5

4.5

-55 to 150

DPAK, IPAK

2.4

1.51

9.6

45

Unit

V

V

A

A

A

W

kV

kV

V/ns

°C

Table 2. Thermal data

Symbol

Parameter

D2PAK TO-220

Value

TO-220FP

Rthj-case Thermal resistance junction-case

2.78

6.25

Rthj-amb

Thermal resistance junction-

ambient

62.5

Rthj-pcb (1) Thermal resistance junction-pcb

35

1. When mounted on an 1-inch² FR-4, 2oz Cu board.

DPAK

IPAK

2.78

100

50

Unit

°C/W

°C/W

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not-

IAR

repetitive

(pulse width limited by Tj Max)

2.4

A

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

150

mJ

DS2912 - Rev 6

page 2/34

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