STD30NF06-1 Просмотр технического описания (PDF) - STMicroelectronics
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STD30NF06-1 Datasheet PDF : 10 Pages
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STD30NF06
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD30NF06
60 V <0.028 Ω 28 A
s TYPICAL RDS(on) = 0.020Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL , AUDIO AMPLIFIERS
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
March 2002
.
Value
60
60
± 20
28
20
112
70
0.47
10
230
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤28A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD = 30V
1/10
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