D2NB60 Просмотр технического описания (PDF) - STMicroelectronics

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D2NB60

N-CHANNEL 600V - 3.3 Ω - 2.6A DPAK/IPAK PowerMESH™ MOSFET

STMicroelectronics 

STD2NB60/STD2NB60-1

Table 11. Source Drain Diode

Symbol

Parameter

Test Conditions

ISD

Source-drain Current

ISDM (1) Source-drain Current

(pulsed)

VSD (2) Forward On Voltage

ISD = 3.3 A; VGS = 0

trr

Qrr

IRRAM

Reverse Recovery Time

Reverse RecoveryCharge

Reverse RecoveryCharge

ISD = 3.3 A; di/dt = 100 A/µs

VDD = 100 V; Tj = 150 °C

(see test circuit, Figure 18)

Note: 1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

3.3

A

13.2

A

1.6

V

500

ns

2.1

µC

8.5

A

Figure 3. Safe Operating Area

Figure 4. Thermal Impedance

Figure 5. Output Characteristics

Figure 6. Transfer Characteristics

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