STF9NK60ZD(2004) Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STF9NK60ZD
(Rev.:2004)
(Rev.:2004)
STMicroelectronics
STF9NK60ZD Datasheet PDF : 12 Pages
| |||
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1mA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10 µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100µA
2.5
3.5
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.5 A
0.85 0.95 Ω
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Coss eq. (3) Equivalent Output Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 3.5 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 480V
Test Conditions
VDD = 300 V, ID = 3.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 480V, ID = 7 A,
VGS = 10V
Min.
Min.
Typ.
5.3
1110
135
30
72
Typ.
22
17
41
8.7
21
Max. Unit
S
pF
pF
pF
pF
Max. Unit
ns
ns
53
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(off)
Turn-off Delay Time
VDD = 300 V, ID = 3.5 A
42
ns
tf
Fall Time
RG = 4.7Ω VGS = 10 V
15
ns
(Resistive Load see, Figure 3)
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
VDD = 480V, ID = 7 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
11
ns
8
ns
20
ns
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
VSD (1)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7 A, VGS = 0
ISD = 7 A, di/dt = 100A/µs
VDD = 30V, Tj = 25°C
(see test circuit, Figure 5)
ISD = 7 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
7
A
28
A
1.6
V
150
ns
663
nC
8.5
A
194
ns
935
nC
9.6
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/12
Share Link: