STB75N20T4 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

STB75N20T4

N-channel 200V - 0.028Ω- 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB75N20 - STP75N20 - STW75N20

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

200

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

IGSS

Gate body leakage current

(VDS = 0)

VDS = ± 20V

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250µA

2

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 37A

1 µA

10 µA

±100 nA

3

4

V

0.028 0.034 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

gfs(1) Forward transconductance VDS = 15V, ID= 37A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz,

VGS =0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD= 160V, ID=75A,

VGS= 10V

(see Figure 16)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Table 6. Switching times

Symbol

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 100V, ID = 37A

RG= 4.7Ω, VGS= 10V,

(see Figure 15)

Min.

Typ.

40

Max. Unit

S

3260

pF

640

pF

110

pF

84

nC

18

nC

34

nC

Min. Typ. Max. Unit

53

ns

33

ns

75

ns

29

ns

4/16

Share Link: