ST9435AS8RG Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST9435AS8RG Datasheet PDF : 7 Pages
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ST9435A
P Channel Enhancement Mode MOSFET
- 5.6A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS
VGS(th)
VGS=0V,ID=-250uA
VDS=VGS,ID=-
250uA
-30
-1.0
V
-3.0 V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100 nA
Zero Gate Voltage
Drain Current
IDSS
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=85℃
-1
-5 uA
On-State Drain
Current
ID(on) VDS=-5V,VGS=-4.5V -10
A
Drain-source On-
Resistance
RDS(on)
VGS=-10V,ID=-5.6A
VGS=-6.0V,ID=-5.0A
VGS=-4.5V,ID=-4.4A
0.057
0.072
0.095
Ω
Forward
Transconductance
gfs
VDS=-15V,ID=-5.7V
13
S
Diode Forward Voltage VSD
IS=-2.3A,VGS=0V
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID≡-3.5A
VDS ==-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID=-1A,VGEN=-10V
RG=6Ω
16
24
2.3
nC
4.5
680
120
pF
75
14
25
16
26 nS
43
70
30
52
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
ST9435A 2007. V1
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