ST333C Просмотр технического описания (PDF) - Vishay Semiconductors
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ST333C Datasheet PDF : 9 Pages
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ST333C..C Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 720 A
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ITM
180° el
1630
1420
1630
1390
1350
1090
720
550
50
VDRM
50
40
55
10/0.47
ITM
180° el
2520
2260
2670
2330
2440
2120
1450
1220
50
VDRM
-
40
55
10/0.47
ITM
100 µs
7610
6820
4080
3600
2420
2100
1230
1027
50
VDRM
-
40
55
10/0.47
UNITS
A
V
A/µs
°C
Ω/µF
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I2√t
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
VALUES UNITS
180° conduction, half sine wave
Double side (single side) cooled
720 (350) A
55 (75) °C
DC at 25 °C heatsink temperature double side cooled
1435
t = 10 ms
t = 8.3 ms
No voltage
reapplied
11 000
11 500
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9250
9700
605
553
428
391
kA2s
t = 0.1 to 10 ms, no voltage reapplied
6050
kA2√s
ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.91
V
(I > π x IT(AV)), TJ = TJ maximum
0.93
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
0.58
mΩ
0.58
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
600
mA
1000
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
Maximum turn-off time
SYMBOL
TEST CONDITIONS
VALUES
UNITS
MIN. MAX.
dI/dt
td
tq
TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/µs
VR = 50 V, tp = 500 µs, dV/dt: See table in device code
1000
1.1
10 30
A/µs
µs
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93678
Revision: 15-May-08
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