ST3414S23RG Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST3414S23RG Datasheet PDF : 6 Pages
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ST3414
N Channel Enhancement Mode MOSFET
4.0A
DESCRIPTION
ST3414 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology.This high density
process is especially tailored to minimize on-state resistance.These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
FEATURE
z 20V/4.2A, RDS(ON) = 40mΩ ( Typ.)
@VGS = 4.5V
z 20V/3.4A, RDS(ON) = 55 mΩ
@VGS = 2.5V
z 20V/2.8A, RDS(ON) = 75 mΩ
@VGS = 1.8V
z Super high density cell design for extremely
low RDS(ON)
z Exceptional on-resistance and maximum DC
current capability
z SOT-23-3L package design
3
14YA
1
2
Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3414S23RG
SOT-23
14YA
※ Week Code : A ~ Z ; a ~ z
※ ST3414S23RG : S23 : SOT23-3L R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414 2006. V1
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