ST3407 Просмотр технического описания (PDF) - STANSON TECHNOLOGY

Номер в каталоге

Компоненты Описание

производитель

ST3407

P Channel Enhancement Mode MOSFET -3.6A

STANSON TECHNOLOGY 

ST3407

P Channel Enhancement Mode MOSFET

-3.6A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain

Current

On-State Drain Current

Drain-source On-Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

V(BR)DSS VGS=0V,ID=-250uA -30

V

VGS(th) VDS=VGS,ID=-250uA -1.0

-3.0 V

IGSS

IDSS

ID(on)

RDS(on)

gfs

VDS=0V,VGS=±20V

±100

VDS=-24V,VGS=0V

VDS=-24V,VGS=0V

TJ=55℃

-1

-9.5

VDS≦-5V,VGS=-10V -10

VGS=-10.0V,ID=-4.0A

VGS=-4.5V,ID=-3.2A

45 60

60 80

VDS=-5.0V,ID=-4.0A

10

nA

uA

A

mΩ

S

VSD

IS=-1.0A,VGS=0V

-0.8 -1.2 V

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS=-15V

VGS=-10V

ID≡-4.0A

VDS=-15V

VGS=0V

F=1MHz

VDD=-15V

RL=15Ω

ID=-1.0A

VGEN=-10V

RG=6Ω

14 21

1.9

nC

3.7

540

131

pF

105

10 16

16 25

nS

32 50

21 32

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST3407 2006. V1

Share Link: