ST3407 Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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ST3407

P Channel Enhancement Mode MOSFET -3.6A

STANSON TECHNOLOGY 

ST3407

P Channel Enhancement Mode MOSFET

-3.6A

DESCRIPTION

ST3407 is the P-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as cellular phone and notebook

computer power management, other battery powered circuits, and low in-line power

loss are required. The product is in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23-3L

3

D

G

S

1

2

FEATURE

� -30V/-4.0A, RDS(ON) = 60mΩ

@VGS = -10V

� -30V/-3.2A, RDS(ON) = 80mΩ

@VGS = -4.5V

� Super high density cell design for

extremely low RDS(ON)

� Exceptional on-resistance and

maximum DC current capability

� SOT-23-3L package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23-3L

3

A7YA

1

2

Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST3407S23RG

SOT-23-3L

A7YA

※ Process Code : A ~ Z ; a ~ z

※ ST3407S23RG S 23: SOT-23-3L ; R : Tape Reel ; G : Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST3407 2006. V1

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