ST3406 Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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ST3406

N-Channel Enhancement Mode MOSFET 5.4A

STANSON TECHNOLOGY 

ST3406

N Channel Enhancement Mode MOSFET

5.4A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

V(BR)DSS

VGS(th)

IGSS

Zero Gate Voltage Drain

Current

IDSS

On-State Drain Current

ID(on)

Drain-source On-Resistance

RDS(on)

Forward Transconductance

gfs

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

VSD

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

Turn-Off Time

td(off)

tf

VGS=0V,ID=-250uA

VDS=VGS,ID=250uA

VDS=0V,VGS=±20V

VDS=24V,VGS=0V

VDS=24V,VGS=0V

TJ=55℃

VDS≧5V,VGS=4.5V

VGS=10V,ID=4.0A

VGS=4.5V,ID=3.6A

VDS=4.5V,ID=5.4A

IS=1.7A,VGS=0V

VDS=15V

VGS=10V

ID≣6.7A

VDS=15V

VGS=0V

F=1MHz

VDD=15V

RL=15Ω

ID=1.0A

VGEN=10V

RG=6Ω

30

V

1.0

3.0 V

±100 nA

1

10 uA

10

A

26

36

33

41

mΩ

12

S

0.8 1.2 V

10 18

1.6

nC

3.1

450

240

pF

38

7 15

10 20

nS

20 40

11 20

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

ST3406 2006. V1

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