ST3406S23RG Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST3406S23RG Datasheet PDF : 6 Pages
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ST3406
N Channel Enhancement Mode MOSFET
5.4A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
VGSS
±20
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
ID
5.4
3.2
Pulsed Drain Current
IDM
25
Continuous Source Current (Diode Conduction)
IS
1.7
Power Dissipation
TA=25℃
TA=70℃
PD
2.0
1.3
Operation Junction Temperature
TJ
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
90
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
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