ST3406 Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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ST3406

N-Channel Enhancement Mode MOSFET 5.4A

STANSON TECHNOLOGY 

ST3406

N Channel Enhancement Mode MOSFET

5.4A

DESCRIPTION

ST3406 is the N-Channel logic enhancement mode power field effect transistor which is

produced using high cell density, DMOS trench technology. This high density process is

especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application such as cellular phone and notebook computer power

management, other battery powered circuits, and low in-line power loss are required.

The product is in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23-3L

3

D

G

S

1

2

FEATURE

z 30V/5.4A, RDS(ON) = 26mΩ(Typ.)

@VGS = 10V

z 30V/4.6A, RDS(ON) = 36mΩ

@VGS = 4.5V

z Super high density cell design for

extremely low RDS(ON)

z Exceptional on-resistance and maximum

DC current capability

z SOT-23-3L package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23-3L

3

A6YA

1

2

Y: Year Code A: Week Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST3406S23RG

SOT-23-3L

A6YA

※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)

※ ST3406S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

ST3406 2006. V1

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