ST3403 Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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производитель

ST3403

P Channel Enchancement Mode MOSFET

STANSON TECHNOLOGY 

P Channel Enchancement Mode MOSFET ST3403

-3.5A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30

Gate Threshold Voltage

Gate Leakage Current

VGS(th) VDS=VGS,ID=-250uA -0.4

IGSS VDS=0V,VGS=±12V

Zero Gate Voltage Drain Current

On-State Drain Current

VDS=-24V,VGS=0V

IDSS VDS=-24V,VGS=0V

TJ=85℃

ID(on) VDS≧-5V,VGS=-4.5V -4

V

-1.0 V

±100 nA

-1

-5 uA

A

Drain-source On-Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

RDS(on)

gfs

VSD

VGS=-10V,ID=-2.8A

VGS=-4.5V,ID=-2.5A

VGS=-2.5V,ID=-1.5A

VGS=-1.8V,ID=-1.0A

VDS=-10V,ID=-2.8A

IS=-1.2A,VGS=0V

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS=-15V,VGS=-4.5V

ID≡-2.0A

VDS=-15V,VGS=0V

F=1MHz

VDD=-15V,RL=15Ω

VGEN=-10V,RG=3Ω

ID≡-1.0A

0.09 0.105

0.100 0.115 Ω

0.140 0.155

0.200 0.255

4

S

-0.8 -1.2 V

5.8

0.8

nC

1.5

380

55

pF

40

6

3.9

nS

40

15

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