ST3401 Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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Компоненты Описание

производитель

ST3401

P Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

ST3401

P Channel Enhancement Mode MOSFET

-4.0A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain

Current

On-State Drain Current

Drain-source On-Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Turn-On Time

Turn-Off Time

Symbol

Condition

Min Typ Max Unit

V(BR)DSS VGS=0V,ID=-250uA -30

V

VGS(th) VDS=VGS,ID=-250uA -0.4

-1.0 V

IGSS

IDSS

ID(on)

RDS(on)

gfs

VDS=0V,VGS=±12V

±100 nA

VDS=-24V,VGS=0V

VDS=-24V,VGS=0V

TJ=55℃

-1

-10 uA

VDS≦-5V,VGS=-4.5V -10

VGS=-10V,ID=-4.0A

45

VGS=-4.5V,ID=-3.2A

50

VGS=-2.5V,ID=-1.2A

60

VDS=-5V,ID=-4.0V

10

A

mΩ

S

VSD

IS=-1.0A,VGS=0V

-0.8 -1.2 V

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS=-15V

VGS=-10V

ID≣-4.0A

VDS=-15V

VGS=0V

F=1MHz

VDS=-15V

VGS=-15V

ID=-1A

RL=6Ω

RG=-10Ω

14 21

1.9

nC

3.7

540

131

pF

105

10 15

15 25

nS

31 50

20 30

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP3401 2005. V1

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