ST3400 Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST3400 Datasheet PDF : 6 Pages
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ST3400
N Channel Enhancement Mode MOSFET
5.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Condition
Min Typ Max Unit
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=55℃
VDS≧5V,VGS=4.5V
VGS=10V,ID=5.8A
VGS=4.5V,ID=4.8A
VGS=2.5V,ID=4.0A
VDS=4.5V,ID=5.8A
IS=1.7A,VGS=0V
30
0.8
1.6
±100
1
10
10
28
33
40
12
0.8 1.2
V
V
nA
uA
A
mΩ
S
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V
VGS=10V
ID≣6.7A
VDS=15V
VGS=0V
F=1MHz
VDD=15V
RL=15Ω
ID=1.0A
VGEN=10V
RG=6Ω
9.7 18
1.6
nC
3.1
450
240
pF
38
7 15
10 20
nS
20 40
11 20
3
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
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