ST3400 Просмотр технического описания (PDF) - STANSON TECHNOLOGY

Номер в каталоге

Компоненты Описание

производитель

ST3400

N Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

ST3400

N Channel Enhancement Mode MOSFET

5.8A

DESCRIPTION

The ST3400 is the N-Channel logic enhancement mode power field effect transistor is

produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance. These

devices are particularly suited for low voltage application such as cellular phone and

notebook computer power management and other battery powered circuits where high

side switching.

PIN CONFIGURATION

SOT-23-3L

3

D

G

S

1

2

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23-3L

3

FEATURE

z 30V/5.8A, RDS(ON) = 28mΩ (Typ.)

@VGS = 10V

z 30V/4.8A, RDS(ON) = 33mΩ

@VGS = 4.5V

z 30V/4.0A, RDS(ON) = 40mΩ

@VGS = 2.5V

z Super high density cell design for

extremely low RDS(ON)

z Exceptional on-resistance and maximum

DC current capability

z SOT-23-3L package design

A0YA

1

2

Y: Year Code A: Week Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST3400S23RG

SOT-23-3L

A0YA

※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)

※ ST3400S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free

1

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stnasontech.com

STN3400 2006. V1

Share Link: