ST2342S23RG Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST2342S23RG Datasheet PDF : 6 Pages
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ST2342
N Channel Enhancement Mode MOSFET
5.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
VDS=20V,VGS=0V
TJ=55℃
VDS≧5V,VGS=4.5V
VGS=4.5V,ID=5.0A
VGS=2.5V,ID=4.5A
VGS=1.8V,ID=4.0A
VDS=15V,ID=4.8A
IS=1.0A,VGS=0V
VDS=10V
VGS=4.5V
ID≣4.8A
VDS=10V
VGS=0V
F=1MHz
VDD=10V
RL=10Ω
ID=1.0A
VGEN=4.5V
RG=6Ω
20
V
0.4
1.0 V
±100 nA
1
10 uA
6
A
0.026
0.028
Ω
0.036
30
S
0.8 1.2 V
10 13
1.4
nC
2.1
600
120
pF
100
15 25
40 60
nS
45 65
30 40
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2342 2006. V1
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