ST2341S23RG Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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ST2341S23RG

P Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

ST2341

P Channel Enhancement Mode MOSFET

-3.5A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain

Current

On-State Drain Current

Drain-source On-Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Turn-On Time

Turn-Off Time

V(BR)DSS VGS=0V,ID=-250uA -20

V

VGS(th) VDS=VGS,ID=-250uA -0.35

-0.9 V

IGSS

IDSS

ID(on)

RDS(on)

gfs

VDS=0V,VGS=±20V

VDS=-20V,VGS=0V

VDS=-20V,VGS=0V

TJ=55℃

VDS≦-5V,VGS=-4.5V

VGS=-4.5V,ID=-3.3A

VGS=-2.5V,ID=-2.8A

VGS=-1.8V,ID=-2.3A

VDS=-5V,ID=-4V

±100 nA

-1

-10 uA

-6

A

0.036

0.045

0.055

3.0

S

VSD

IS=-1A,VGS=0V

-0.8 -1.2 V

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS=-6V

VGS=-4.5V

ID≣-3.3A

VDS=-6.0V

VGS=0V

F=1MHz

VDD=-6V

RL=6Ω

ID=-1.0A

VGEN=-4.5V

RG=6Ω

8.0 13

1.2

nC

2.2

700

160

pF

120

15 25

35 55

nS

60 90

40 40

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2341 2006. Rev.1

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