ST2305AS23RG Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST2305AS23RG Datasheet PDF : 6 Pages
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ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
V(BR)DSS VGS=0V,ID=-250uA -15
V
VGS(th) VDS=VGS,ID=-250uA -0.3
-1.5 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VDS≦-5V,VGS=-2.5V
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-2.0A
VGS=-1.8V,ID=-2.0A
VDS=-5V,ID=-3.5V
±100 nA
-1
-10 uA
-6
-3
A
0.045
0.055
Ω
0.09
8.5
S
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
VSD
IS=-1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-10V
VGS=-4.5V
ID≣-3.5A
VDS=-10V
VGS=0V
F=1MHz
VDD=-10V
RL=6Ω
ID=-1.0A
VGEN=-4.5V
RG=6Ω
-0.8 -1.2 V
10 12
2
nC
2
485
90
pF
40
10 18
13 22
nS
18 24
15 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
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