ST2305 Просмотр технического описания (PDF) - STANSON TECHNOLOGY
Номер в каталоге
Компоненты Описание
производитель
ST2305 Datasheet PDF : 6 Pages
| |||
P Channel Enchancement Mode MOSFET
-3.5A
ST2305
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -10
V
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=-250uA -0.45
-1.5 V
Gate Leakage Current
IGSS VDS=0V,VGS=+/-12V
100 nA
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=-20V,VGS=0V
IDSS VDS=-20V,VGS=0V
TJ=55℃
ID(on) VDS≦-5V,VGS=-4.5V -6
VDS≦-5V,VGS=-2.5V -3
-1
-10 uA
A
RDS(on)
gfs
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-2.0A
VGS=-1.8V,ID=-2.0A
VDS=-5V,ID=-3.5V
0.045 0.05
0.55 0.07 Ω
0.09 0.105
8.5
S
VSD IS=-1.6A,VGS=0V
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-4.5V
ID≡-3.5A
VDS=-10V,VGS=0V
F=1MHz
VDD=-10V,RL=6Ω
ID=-1.0A,VGEN=-4.5V
RG=6Ω
10 12
2
nC
2
1200
300
pF
210
13 25
20 35 nS
42 70
20 35
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 3
Share Link: 