ST2304 Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST2304 Datasheet PDF : 6 Pages
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N Channel Enchancement Mode MOSFET
2.5A
ST2304
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30
V
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250uA 1.0
3.0 V
Gate Leakage Current
IGSS VDS=0V,VGS=20V
100 nA
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=30V,VGS=1.0V
1
IDSS VDS=30V,VGS=0V
10 uA
TJ=55℃
ID(on) VDS≧4.5V,VGS=10V 6
A
VDS≧4.5V,VGS=4.5V 4
RDS(on) VGS=10V,ID=2.5A
0.055 0.07 Ω
VGS=4.5V,ID=2.0A
0.08 0.105
gfs
VDS=4.5V,ID=2.5V
4.6
S
VSD IS=-1.25A,VGS=0V
0.77 1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID≡2.5A
VDS=10V,VGS=0V
F=1MHz
VDD=15V,RL=15Ω
ID=1.0A,VGEN=10V
RG=6Ω
4.5 10
0.8
nC
1.0
240
110
pF
17
8 20
12 30 nS
17 35
8 20
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