ST2302M Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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производитель

ST2302M

N Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

ST2302M

N Channel Enhancement Mode MOSFET

3.6A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

V(BR)DSS

VGS=0V,ID=250uA

20

VGS(th) VDS=VGS,ID=250uA 0.5

V

1.2

V

Gate Leakage Current

Zero Gate Voltage Drain

Current

IGSS

IDSS

On-State Drain Current

Drain-source On-Resistance

Forward Transconductance

ID(on)

RDS(on)

gfs

VDS=0V,VGS=±12V

VDS=20V,VGS=0V

VDS=20V,VGS=0V

TJ=55℃

VDS≧5V,VGS=4.5V

VDS≧5V,VGS=2.5V

VGS=4.5V,ID=3.6A

VGS=2.5V,ID=3.1A

VDS=5V,ID=3.6V

±100 nA

1

10

uA

6

4

A

0.09

Ω

0.13

10

S

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Turn-On Time

Turn-Off Time

VSD

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

IS=1.6A,VGS=0V

VDS=10V

VGS=4.5V

ID≣3.6A

VDS=10V

VGS=0V

F=1MHz

VDD=10V

RL=5.5Ω

ID=3.6A

VGEN=4.5V

RG=6Ω

0.85 1.2

V

5.4 10

0.65

nC

1.4

340

115

pF

33

12 25

36 60

nS

34 60

10 25

3

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2302M 2007. V1

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