ST2302 Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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производитель

ST2302

N Channel Enchancement Mode MOSFET

STANSON TECHNOLOGY 

N Channel Enchancement Mode MOSFET

3.6A

ST2302

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10uA 20

V

Gate Threshold Voltage

VGS(th) VDS=VGS,ID=50uA 0.45

1.2 V

Gate Leakage Current

IGSS

VDS=0V,VGS=8V

100 nA

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

ID(on)

RDS(on)

gfs

VSD

VDS=20V,VGS=0V

VDS=20V,VGS=0V

TJ=55℃

VDS≧5V,VGS=4.5V

VDS≧5V,VGS=2.5V

VGS=4.5V,ID=3.6A

VGS=2.5V,ID=3.1A

VDS=5V,ID=3.6V

IS=-1.6A,VGS=0V

1

10 uA

6

A

4

0.05 0.08 Ω

0.07 0.095

10

S

0.85 1.2 V

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS=10V,VGS=4.5V

ID≡-3.6A

VDS=10V,VGS=0V

F=1MHz

VDD=10V,RL=5.5Ω

ID=3.6A,VGEN=4.5V

RG=6Ω

5.4 10

0.65

nC

1.4

340

115

pF

33

12 25

36 60 nS

34 60

10 25

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