ST2301M Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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ST2301M

P Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

ST2301M

P Channel Enhancement Mode MOSFET

-3.0A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain

Current

On-State Drain Current

Drain-source On-Resistance

Forward Transconductance

V(BR)DSS VGS=0V,ID=-250uA -20

V

VGS(th) VDS=VGS,ID=-250uA -0.48

-1.5 V

IGSS

IDSS

ID(on)

RDS(on)

gfs

VDS=0V,VGS=±12V

VDS=-20V,VGS=0V

VDS=-20V,VGS=0V

TJ=55℃

VDS≦-5V,VGS=-4.5V

VDS≦-5V,VGS=-2.5V

VGS=-4.5V,ID=-2.8A

VGS=-2.5V,ID=-2.0A

VDS=-5V,ID=-2.8V

±100 nA

-1

-10 uA

-6

-3

A

0.135

Ω

0.220

6.5

S

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Turn-On Time

Turn-Off Time

VSD

IS=-1.6A,VGS=0V

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS=-6V

VGS=-4.5V

ID≣-2.8A

VDS=-6V

VGS=0V

F=1MHz

VDD=-6V

RL=6Ω

ID=-1A

VGEN=-4.5V

RG=6Ω

-0.8 -1.2 V

4.8 8

0.75

nC

1.4

35

150

pF

60

10 20

32 45

nS

38 55

30 50

3

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2301M 2007. V1

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