ST2301MSRG Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST2301MSRG Datasheet PDF : 7 Pages
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ST2301M
P Channel Enhancement Mode MOSFET
-3.0A
DESCRIPTION
The ST2301M is the P-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other batter powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
FEATURE
z -20V/-2.8A, RDS(ON) = 130m-ohm (Typ.)
@VGS = -4.5V
z -20V/-2.0A, RDS(ON) = 220m-ohm
@VGS = -2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
S01YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2301MSRG
SOT-23
S01YA
※ Process Code : A ~ Z ; a ~ z
※ ST2301MSRG S : SOT-23 ; R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301M 2007. V1
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