ST1S09(2007) Просмотр технического описания (PDF) - STMicroelectronics
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Компоненты Описание
производитель
ST1S09
(Rev.:2007)
(Rev.:2007)
STMicroelectronics
ST1S09 Datasheet PDF : 18 Pages
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ST1S09
Electrical characteristics
Table 7.
Symbol
Electrical characteristics for ST1S09IPU Refer to Figure 22. application circuit
VIN_SW = VIN_A = VINH = 5V, VO = 1.2V, C1 = 4.7µF, C2 = 22µF, L1 = 2.7µH,
TJ = -30 to 125°C (unless otherwise specified. Typical values are referred to 25°C)
Parameter
Test conditions
Min. Typ. Max. Unit
FB
IFB
VI
OVP
Feedback voltage
VFB pin bias current
Minimum input voltage
Over voltage protection
threshold
Over voltage protection
hysteresis
IQ
Quiescent current
IO
Output current
VINH Inhibit threshold
IINH Inhibit pin current
%VO/ΔVI Output line regulation
%VO/ΔIO Output load regulation
PWMfS PWM switching frequency
DMAX Maximum duty cycle
RDSON-N NMOS switch on resistance
RDSON-P PMOS switch on resistance
ISWL Switching current limitation
ν
Efficiency Note: 1
TSHDN
THYS
Thermal shutdown
Thermal shutdown hysteresis
%VO/ΔIO Load transient response
%VO/ΔIO Short circuit removal response
784 800
IO = 10mA to 2A
VO rising
2.7
1.05 VO 1.1 VO
VO falling
5
VINH > 1.2V, not switching
1.5
VINH < 0.4V, T = - 30°C to 85°C
VI = 2.7 to 5.5V Note: 1
2
Device ON, VI = 2.7 to 5.5V
1.3
Device ON, VI = 2.7 to 5V
1.2
Device OFF
VI = 2.7V to 5.5V, IO = 100mA
Note: 1
IO = 10mA to 2A Note: 1
VFB = 0.65V
1.2
80
ISW = 750 mA
ISW = 750 mA
Note: 1
2.5
IO = 10mA to 100mA, VO = 3.3V 65
IO = 100mA to 2A, VO = 3.3V
82
IO = 100mA to 1A, TA = 25°C
tR = tF ≥ 200ns, Note: 1
-10
IO = 10mA to IO = short,
TA = 25°C Note: 1
-10
0.16
0.2
1.5
87
0.1
0.1
2.9
87
150
20
816 mV
600 nA
V
V
%
2.5 mA
1
µA
A
V
0.4
2
µA
%VO/
ΔVI
0.6
%VO/
ΔIO
1.8 MHz
%
Ω
Ω
3.5 A
%
°C
°C
+10 %VO
+10 %VO
Note: 1 Guaranteed by design, but not tested in production.
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