ST1S09(2007) Просмотр технического описания (PDF) - STMicroelectronics
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производитель
ST1S09
(Rev.:2007)
(Rev.:2007)
STMicroelectronics
ST1S09 Datasheet PDF : 18 Pages
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Electrical characteristics
4
Electrical characteristics
ST1S09
Table 6.
Electrical characteristics for ST1S09PU Refer to Figure 21. application circuit
VIN_SW = VIN_A = 5V, VO = 1.2V, C1 = 4.7µF, C2 = 22µF, L1 = 2.7µH, TJ = -30 to 125°C
(unless otherwise specified. Typical values are referred to 25°C)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
FB Feedback voltage
784 800 816 mV
IFB
VI
UVLO
VFB pin bias current
Input voltage
IO = 10mA to 2A
VI Rising
Under voltage lock out threshold
Hysteresis
600 nA
4.5
5.5 V
3.5
3.7
3.9
V
150
mV
OVP
Over voltage protection
threshold
Over voltage protection
hysteresis
VO rising
VO falling
1.05 VO 1.1 VO
V
5
%
IOVP Overvoltage clamping current
IQ
Quiescent current
IO
Output current
%VO/ΔVI Output line regulation
%VO/ΔIO
PWMfS
DMAX
Output load regulation
PWM switching frequency
Maximum duty cycle
Power good output threshold
Power good output voltage low
RDSON-N NMOS switch on resistance
RDSON-P PMOS switch on resistance
ISWL Switching current limitation
ν
Efficiency Note: 1
TSHDN
THYS
Thermal shutdown
Thermal shutdown hysteresis
%VO/ΔIO Load transient response
%VO/ΔIO Short circuit removal response
VO = 1.2V
Not switching
VI = 4.5 to 5.5V Note: 1
VI = 4.5V to 5.5V, IO = 100mA
Note: 1
IO = 10mA to 2A Note: 1
VFB = 0.65V
ISINK = 6mA open drain output
ISW = 750 mA
ISW = 750 mA
Note: 1
IO = 10mA to 100mA, VO = 3.3V
IO = 100mA to 2A, VO = 3.3V
IO = 100mA to 1A, TA = 25°C
tR = tF ≥ 200ns, Note: 1
IO = 10mA to IO = short,
TA = 25°C Note: 1
300
mA
1.5
2.5 mA
2
A
0.16
0.2
%VO/
ΔVI
0.6 %
1.2
1.5
1.8 MHz
80
87
%
0.92 VO
V
0.4 V
0.1
Ω
0.1
Ω
2.5
2.9
3.5
A
65
%
82
87
150
°C
20
°C
-10
+10 %VO
-10
+10 %VO
Note: 1 Guaranteed by design, but not tested in production.
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