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SSR1N50A Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
SSR1N50A
Fairchild
Fairchild Semiconductor Fairchild
SSR1N50A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
SSR/U1N50A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
500 -- -- V
-- 0.63 -- V/ΟC
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µ A
VGS=0V,ID=250 µA
ID=250 µ A See Fig 7
VDS=5V,ID=250 µ A
VGS=30V
VGS=-30V
VDS=500V
VDS=400V,TC=125 ΟC
Static Drain-Source
On-State Resistance
-- -- 5.5 VGS=10V,ID=0.65A O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 1.04 --
VDS=50V,ID=0.65A
O4
-- 220 290
--
30
35
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 11 13
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 12 35
-- 13 35
VDD=250V,ID=1.5A,
-- 42 90 ns RG=24
See Fig 13
-- 15 40
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 11 16
VDS=400V,VGS=10V,
-- 1.6 -- nC ID=1.5A
-- 5.5 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 1.3
Integral reverse pn-diode
A
-- 5
in the MOSFET
O4 -- -- 1.15 V TJ=25ΟC,IS=1.3A,VGS=0V
-- 162 -- ns TJ=25ΟC,IF=1.5A
-- 0.54 -- µ C diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=120mH, IAS=1.3A, VDD=50V, RG=27, Starting TJ =25 oC
O3 ISD <_ 1.5A, di/dt <_70A/µs, VDD<_ BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature

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