SST39SF010 Просмотр технического описания (PDF) - Silicon Storage Technology

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SST39SF010

512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

Silicon Storage Technology 

512 Kbit / 1 Mbit Multi-Purpose Flash

SST39SF512 / SST39SF010

Data Sheet

TABLE 5: DC OPERATING CHARACTERISTICS VDD = 5.0V±10%

Limits

Symbol Parameter

Min Max Units

IDD

Power Supply Current

Read

Write

ISB1

Standby VDD Current

(TTL input)

ISB2

Standby VDD Current

(CMOS input)

ILI

Input Leakage Current

ILO

Output Leakage Current

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

VOH

Output High Voltage

VH

Supervoltage for A9 pin

IH

Supervoltage Current for A9 pin

30 mA

50 mA

3

µA

50 µA

1

µA

10 µA

0.8 V

2.0

V

0.4 V

2.4

V

11.4 12.6 V

200 µA

Test Conditions

Address input=VIL/VIH, at f=1/TRC Min

VDD=VDD Max

CE#=OE#=VIL, WE#=VIH, all I/Os open

CE#=WE#=VIL, OE#=VIH

CE#=VIH, VDD=VDD Max

CE#=VDD -0.3V, VDD=VDD Max

VIN=GND to VDD, VDD=VDD Max

VOUT=GND to VDD, VDD=VDD Max

VDD=VDD Min

VDD=VDD Max

IOL=2.1 mA, VDD=VDD Min

IOH=-400 µA, VDD=VDD Min

CE#=OE#=VIL, WE#=VIH

CE#=OE#=VIL, WE#=VIH, A9=VH Max

T5.3 394

TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Program/Erase Operation

100

µs

T6.1 394

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

I/O Pin Capacitance

VI/O = 0V

12 pF

CIN1

Input Capacitance

VIN = 0V

6 pF

T7.0 394

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 8: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units Test Method

NEND1

TDR1

ILTH1

Endurance

Data Retention

Latch Up

10,000

100

100 + IDD

Cycles

Years

mA

JEDEC Standard A117

JEDEC Standard A103

JEDEC Standard 78

T8.1 394

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2001 Silicon Storage Technology, Inc.

8

S71149-03-000 4/01 394

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