SST29EE010-150-4C-E Просмотр технического описания (PDF) - Silicon Storage Technology
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SST29EE010-150-4C-E Datasheet PDF : 27 Pages
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1 Megabit Page Mode EEPROM
SST29EE010, SST29LE010, SST29VE010
AC CHARACTERISTICS
TABLE 10: 29EE010 READ CYCLE TIMING PARAMETERS
Symbol
TRC
TCE
TAA
TOE
TCLZ(1)
TOLZ(1)
TCHZ(1)
TOHZ(1)
TOH(1)
Parameter
Read Cycle time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address
Change
TABLE 11: 29LE010 READ CYCLE TIMING PARAMETERS
Symbol
TRC
TCE
TAA
TOE
TCLZ(1)
TOLZ(1)
TCHZ(1)
TOHZ(1)
TOH(1)
Parameter
Read Cycle time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
TABLE 12: 29VE010 READ CYCLE TIMING PARAMETERS
Symbol
TRC
TCE
TAA
TOE
TCLZ(1)
TOLZ(1)
TCHZ(1)
TOHZ(1)
TOH(1)
Parameter
Read Cycle time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
© 1998 Silicon Storage Technology, Inc.
10
29EE010-90
Min Max
90
90
90
40
0
0
30
30
0
29EE010-120
Min Max
120
120
120
50
0
0
30
30
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
304 PGM T10.1
29LE010-150
Min Max
150
150
150
60
0
0
30
30
0
29LE010-200
Min Max
200
200
200
100
0
0
50
50
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
304 PGM T11.0
29VE010-200
Min Max
200
200
200
100
0
0
50
50
0
29VE010-250
Min Max
250
250
250
120
0
0
50
50
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
304 PGM T12.0
304-04 12/97
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