SSD20P06-135D Просмотр технического описания (PDF) - Secos Corporation.
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SSD20P06-135D Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SSD20P06-135D
P-Ch Enhancement Mode Power MOSFET
16A, -60V, RDS(ON) 135mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
-1
IGSS
-
-
-
VDS= VGS, ID = -250 μA
-
±100 nA VDS = 0V, VGS= ±20V
Zero Gate Voltage Drain Current
On-State Drain Current a
-
-
-1
VDS= -48V, VGS= 0V
IDSS
μA
-
-
-10
VDS= -48V, VGS=0V, TJ=55°C
ID(on)
-20
-
-
A VDS = -5V, VGS= -10V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
-
-
RDS(ON)
-
-
gfs
-
8
VSD
-
-
Dynamic b
135
VGS= -10V, ID= -28A
mΩ
190
VGS= -4.5V, ID= -14A
-
S VDS= -15V, ID= -28A
-1.2
V IS= -2.5 A, VGS= 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
-
18
-
-
5
-
VDS = -30 V
nC VGS = -4.5 V
Qgd
-
2
-
ID = -28 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
570
-
VDS = -15 V
Coss
-
80
-
pF VGS = 0 V
f = 1MHz
Crss
-
40
-
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
8
-
Tr
-
10
-
VIDD=D=-1-A30 V
nS VGEN = -10 V
Td(off)
-
35
-
RL= 30
Tf
-
12
-
RG= 6
Notes
a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 4
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