SSF1016 Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.
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SSF1016 Datasheet PDF : 5 Pages
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SSF1016
Feathers:
Advanced trench process technology
avalanche energy, 100% test
ID =75A
BV=100V
Rdson=16mΩ(Max.）
Fully characterized avalanche voltage and current
Description:
The SSF1016 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
SSF1016 TOP View (T0-220)
and electrical parameter repeatability. SSF1016 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC Continuous drain current,VGS@10V
ID@Tc=100ْC
IDM
Continuous drain current,VGS@10V
Pulsed drain current ①
PD@TC=25ْC
Power dissipation
Linear derating factor
VGS
EAS
EAR
dv/dt
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
Peak diode recovery voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
Min.
RθJC
Junction-to-case
—
RθJA
Junction-to-ambient
—
Max.
75
65
300
227
1.5
±20
380
TBD
31
–55 to +150
Typ.
Max.
0.55
—
—
62
Units
A
W
W/ ْC
V
mJ
mJ
v/ns
ْC
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
BVDSS Drain-to-Source breakdown voltage 100
RDS(on) Static Drain-to-Source on-resistance —
VGS(th)
Gate threshold voltage
2.0
—
IDSS
Drain-to-Source leakage current
—
Typ.
—
11
—
—
—
Gate-to-Source forward leakage
IGSS Gate-to-Source reverse leakage
——
——
Max. Units
Test Conditions
—
16
4.0
2
10
100
-100
V VGS=0V,ID=250μA
mΩ VGS=10V,ID=30A
V VDS=VGS,ID=250μA
VDS=100V,VGS=0V
μA VDS=100V,
VGS=0V,TJ=150ْC
nA VGS=20V
VGS=-20V
©Silikron Semiconductor CO.,LTD.
2009.8.10
Version : 1.0
page 1of5
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