SSF2336 Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.
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SSF2336 Datasheet PDF : 5 Pages
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SSF2336
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
VDS=20V,VGS=0V
IGSS
VGS=±12V,VDS=0V
1
μA
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
0.6
1.2
V
VGS=2.5V, ID=3.6A
50
80
mΩ
VGS=4.5V, ID=4.2A
35
45
mΩ
VDS=10V,ID=4A
8
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
700
PF
Coss
VDS=15V,VGS=0V,
F=1.0MHz
100
PF
Crss
90
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t d(on)
7
nS
tr
VDD=10V, RL = 2.8 Ω
50
nS
VGS=4.5V,RGEN=6Ω,
td(off)
ID=3.6A,
26
nS
tf
10
nS
Total Gate Charge
Gate-Source Charge
Qg
9
nC
Qgs
VDS=10V,ID=4.2A,VGS=4.5V
2
nC
Gate-Drain Charge
Qgd
1.8
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.3A
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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