SSF2312 Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.

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Компоненты Описание

производитель

SSF2312

Battery protection

Silikron Semiconductor Co.,LTD. 

SSF2312

Gate Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

DYNAMIC CHARACTERISTICS (Note4)

VGS(th)

RDS(ON)

gFS

VDS=VGS,ID=250μA

0.5 0.65

1.2

V

VGS=2.5V, ID=4.5A

33

40

mΩ

VGS=4.5V, ID=5A

27

33

mΩ

VDS=10V,ID=5A

10

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Clss

500

PF

Coss

VDS=8V,VGS=0V,

F=1.0MHz

300

PF

Crss

140

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t d(on)

20

40

nS

Turn-on Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

tr

td(off)

tf

VDD=10V,ID=1A

VGS=4.5V,RGEN=6Ω

18

40

nS

60

108

nS

28

56

nS

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

DRAIN-SOURCE DIODE CHARACTERISTICS

VDS=10V,ID=5A,VGS=4.5V

10

15

nC

2.3

nC

2.9

nC

Diode Forward Voltage (Note 3)

Diode Forward Current (Note 2)

VSD

VGS=0V,IS=1A

IS

1.2

V

1

A

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

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