SSF2312 Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.
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SSF2312 Datasheet PDF : 5 Pages
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SSF2312
DESCRIPTION
The SSF2312 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
GENERAL FEATURES
● VDS = 20V,ID = 4.5A
RDS(ON) < 40mΩ @ VGS=2.5V
RDS(ON) < 33mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
D
G
S
Schematic diagram
3D
2312
G1
2S
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2312
SSF2312
SOT-23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±8
4.5
13.5
1.25
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
ON CHARACTERISTICS (Note 3)
100
℃ /W
Min Typ Max
20
1
±100
Unit
V
μA
nA
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