S9014 Просмотр технического описания (PDF) - Fairchild Semiconductor
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S9014 Datasheet PDF : 4 Pages
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SS9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW)
• High hFE and good linearity
• Complementary to SS9015
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
VBE (on)
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
IC =100µA, IE =0
IC =1mA, IB =0
IE =100µA, IC =0
VCB =50V, IE =0
VEB =5V, IC =0
VCE =5V, IC =1mA
IC =100mA, IB =5mA
IC =100mA, IB =5mA
VCE =5V, IC =2mA
VCB =10V, IE =0
f=1MHz
fT
Current Gain Bandwidth Product
VCE =5V, IC =10mA
NF
Noise Figure
VCE =5V, IC =0.2mA
f=1KHz, RS=2KΩ
hFE Classification
Classification
hFE
A
60 ~ 150
B
100 ~ 300
1
TO-92
1. Emitter 2. Base 3. Collector
Ratings
50
45
5
100
450
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Min.
50
45
5
60
0.58
150
Typ.
280
0.14
0.84
0.63
2.2
270
0.9
Max.
50
50
1000
0.3
1.0
0.7
3.5
Units
V
V
V
nA
nA
V
V
pF
MHz
10
dB
C
200 ~ 600
D
400 ~ 1000
©2002 Fairchild Semiconductor Corporation
Rev. A3, May 2002
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