SPA15N60C3(2003) Просмотр технического описания (PDF) - Infineon Technologies
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производитель
SPA15N60C3 Datasheet PDF : 13 Pages
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Final data
SPP15N60C3, SPI15N60C3
SPA15N60C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP15N60C3
14 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
15
A
A
10 1
9
Tj(START)=25°C
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
15 Avalanche energy
EAS = f (Tj)
par.: ID = 7.5 A, VDD = 50 V
0.5
mJ
6
Tj(START)=125°C
3
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
µs 10 4
tAR
16 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPP15N60C3
720
V
680
660
0.3
640
620
0.2
600
0.1
580
560
0
20 40 60 80 100 120 °C 160
Tj
540
-60 -20
20
60 100 °C
180
Tj
Page 8
2003-07-01
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