SP8K5 Просмотр технического описания (PDF) - ROHM Semiconductor
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SP8K5 Datasheet PDF : 4 Pages
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Transistors
zElectrical characteristics (Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
∗
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
Min.
−
30
−
1.0
−
−
−
2.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
59
93
107
−
140
45
30
6
6
17
4
2.5
0.8
0.8
Max.
10
−
1
2.5
83
130
150
−
−
−
−
−
−
−
−
3.5
−
−
Unit
Conditions
µA VGS=20V, VDS=0V
V ID=1mA, VGS=0V
µA VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=3.5A, VGS=10V
mΩ ID=3.5A, VGS=4.5V
ID=3.5A, VGS=4V
S ID=3.5A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=1.75A, VDD 15V
ns VGS=10V
ns RL=8.57Ω
ns RGS=10Ω
nC VDD 15V
nC VGS=5V
nC ID=3.5A
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗
−
− 1.2 V IS=6.4A, VGS=0V
SP8K5
2/3
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