SP000216361(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SP000216361
(Rev.:2006)

CoolMOS™ Power Transistor

Infineon Technologies 

Parameter

Symbol Conditions

SPA20N60CFD

min.

Values

typ.

Unit

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

C iss

-

C oss

V GS=0 V, V DS=25 V,

f =1 MHz

-

C rss

-

Effective output capacitance, energy

related4)

C o(er)

-

V GS=0 V, V DS=0 V

to 480 V

Effective output capacitance, time

related5)

C o(tr)

-

Turn-on delay time

Rise time

Turn-off delay time

Fall time

t d(on)

-

tr

V DD=380 V,

-

V GS=10 V, I D=20.7 A,

t d(off)

R G=3.6 Ω

-

tf

-

2400

780

50

83

160

12

15

59

6.4

- pF

-

-

-

-

- ns

-

-

-

Gate Charge Characteristics

Gate to source charge

Q gs

Gate to drain charge

Q gd

Gate charge total

Qg

Gate plateau voltage

V plateau

0) J-STD20 and JESD22

1) Limited only by maximum temperature.

V DD=480 V,

I D=20.7 A,

V GS=0 to 10 V

-

15

- nC

-

54

-

-

95

124

-

7.0

-V

2) Pulse width t p limited by T j,max

3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.

4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 1.2

page 3

2006-05-15

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