SP000216361(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SP000216361
(Rev.:2006)

CoolMOS™ Power Transistor

Infineon Technologies 

SPA20N60CFD

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case R thJC

Thermal resistance, junction -

ambient

R thJA

leaded

Soldering temperature, wave solderingT sold

1.6 mm (0.063 in.)

from case for 10 s

min.

Values

typ.

Unit

max.

-

-

3.6 K/W

-

-

62

-

-

260 °C

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

600

-

Avalanche breakdown voltage

V (BR)DS V GS=0 V, I D=20 A

-

700

Gate threshold voltage

V GS(th) V DS=V GS, I D=1000µA

3

4

-V

-

5

Zero gate voltage drain current

I DSS

V DS=600 V, V GS=0 V,

T j=25 °C

-

V DS=600 V, V GS=0 V,

T j=150 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=13.1 A,

T j=25 °C

-

Gate resistance

Transconductance

V GS=10 V, I D=13.1 A,

T j=150 °C

-

RG

f =1 MHz, open drain

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=13.1 A

-

2.1

- µA

1700

-

-

100 nA

0.19 0.22 Ω

0.43

-

0.54

-

17.5

-S

Rev. 1.2

page 2

2006-05-15

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