2N5089 Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2N5089 Datasheet PDF : 6 Pages
| |||
2N5088, 2N5089
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
2N5088
2N5089
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
2N5088
2N5089
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
ON CHARACTERISTICS
2N5088
2N5089
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base −Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW,
f = 1.0 kHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
Symbol
Min
Max
Unit
V(BR)CEO
30
25
V(BR)CBO
35
30
ICBO
−
−
IEBO
−
−
Vdc
−
−
Vdc
−
−
nAdc
50
50
nAdc
50
100
hFE
VCE(sat)
VBE(on)
−
300
900
400 1200
350
−
450
−
300
−
400
−
−
0.5
Vdc
−
0.8
Vdc
fT
50
−
MHz
Ccb
−
4.0
pF
Ceb
−
10
pF
hfe
−
350 1400
450 1800
NF
dB
−
3.0
−
2.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
Share Link: 