2N5089(2001) Просмотр технического описания (PDF) - ON Semiconductor
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2N5089 Datasheet PDF : 8 Pages
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ON Semiconductort
Amplifier Transistors
NPN Silicon
2N5088
2N5089
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5088 2N5089
30
25
35
30
3.0
50
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Symbol
Max
RqJA(1)
200
RqJC
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
2N5088
2N5089
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
2N5088
2N5089
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
2N5088
2N5089
1. RθJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
ICBO
IEBO
1
2
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
2
BASE
1
EMITTER
Min
Max
Unit
Vdc
30
—
25
—
Vdc
35
—
30
—
nAdc
—
50
—
50
nAdc
—
50
—
100
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 1
Publication Order Number:
2N5088/D
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