UT62W1024-35(2003) Просмотр технического описания (PDF) - Utron Technology Inc
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UT62W1024-35 Datasheet PDF : 15 Pages
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UTRON
Rev. 1.1
UT62W1024
128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM
Notes :
1. WE , CE must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE , high CE2, low WE .
3. During a WE controlled write cycle with OE low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5. If the CE low transition and CE2 high transition occurs simultaneously with or after WE low transition, the outputs remain in a high
impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ± 500mV from steady state.
DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃)
PARAMETER
Vcc for Data Retention
Data Retention Current
SYMBOL TEST CONDITION
VDR
CE ≧VCC-0.2V or
CE2 ≤ 0.2V
IDR
Vcc=3V
CE ≧VCC-0.2V or
CE2 ≤ 0.2V
Chip Disable to Data
Retention Time
tCDR See Data Retention
Waveforms (below)
Recovery Time
tR
tRC* = Read Cycle Time
*Those parameters are for reference only under 50℃
DATA RETENTION WAVEFORM
MIN. TYP.
2.0
-
MAX. UNIT
-
V
-L -
- LL -
0
tRC*
2
80 µA
20*
0.5
20 µA
10*
-
-
ns
-
-
ns
Low Vcc Data Retention Waveform (1) ( CE controlled)
VCC
CE
Vcc(min.)
tCDR
VIH
VDR ≧ 2V
CE ≧ VCC-0.2V
Vcc(min.)
tR
VIH
Low Vcc Data Retention Waveform (2) (CE2 controlled)
VCC
CE2
VCC(min.)
tCDR
VIL
VDR ≧ 2V
CE2 ≦ 0.2V
VCC(min.)
tR
VIL
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
8
P80056
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