DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UT62L1024LS-55L(Rev1_7) Просмотр технического описания (PDF) - Utron Technology Inc

Номер в каталоге
Компоненты Описание
производитель
UT62L1024LS-55L
(Rev.:Rev1_7)
Utron
Utron Technology Inc Utron
UT62L1024LS-55L Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
UTRON
Rev. 1.7
UT62L1024
128K X 8 BIT LOW POWER CMOS SRAM
CAPACITANCE (Ta=25, f=1.0MHz)
PARAMETER
SYMBOL MIN.
MAX.
Input Capacitance
CIN
-
6
Input/Output Capacitance
CI/O
-
8
Note : These parameters are guaranteed by device characterization, but not production tested.
UNIT
pF
pF
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.4V to 2.4V
5ns
1.5V
CL=50pF, IOH/IOL=-1mA/2mA
AC ELECTRICAL CHARACTERISTICS (VCC = 2.7V~3.6V , Ta = 0to +70)
(1) READ CYCLE
PARAMETER
SYMBOL UT62L1024-35 UT62L1024-55 UT62L1024-70 UNIT
MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
tRC
35
-
55
-
70
-
ns
Address Access Time
tAA
-
35
-
55
-
70 ns
Chip Enable Access Time
tACE1, tACE2
-
35
-
55
-
70 ns
Output Enable Access Time
tOE
-
25
-
30
-
35 ns
Chip Enable to Output in Low-Z tCLZ1*, tCLZ2* 10
-
10
-
10
-
ns
Output Enable to Output in Low-Z tOLZ*
5
-
5
-
5
- ns
Chip Disable to Output in High-Z tCHZ1*, tCHZ2* -
25
-
30
-
35 ns
Output Disable to Output in High-Z tOHZ*
-
25
-
30
-
35 ns
Output Hold from Address Change tOH
5
-
5
-
5
- ns
(2) WRITE CYCLE
PARAMETER
SYMBOL UT62L1024-35 UT62L1024-55 UT62L1024-70
MIN. MAX. MIN. MAX. MIN. MAX.
Write Cycle Time
tWC
35
-
55
-
70
-
Address Valid to End of Write
tAW
30
-
50
-
60
-
Chip Enable to End of Write
tCW1, tCW2
30
-
50
-
60
-
Address Set-up Time
tAS
0
-
0
-
0
-
Write Pulse Width
tWP
25
-
40
-
45
-
Write Recovery Time
tWR
0
-
0
-
0
-
Data to Write Time Overlap
tDW
20
-
25
-
30
-
Data Hold from End of Write-Time tDH
0
-
0
-
0
-
Output Active from End of Write tOW*
5
-
5
-
5
-
Write to Output in High-Z
tWHZ*
-
15
-
20
-
25
*These parameters are guaranteed by device characterization, but not production tested.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
4
P80033

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]