UT61L5128MC-10(2002) Просмотр технического описания (PDF) - Utron Technology Inc
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UT61L5128MC-10 Datasheet PDF : 10 Pages
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UTRON
Preliminary Rev. 1.1
UT61L5128
512K X 8 BIT HIGH SPEED CMOS SRAM
FEATURES
Fast access time :
8ns (max.) for Vcc=3.15V~3.6V
10ns (max.) for Vcc=3.0V~3.6V
CMOS low power operating
Operating current : 260/220mA (Icc max.)
Standby current : 10/2mA(max.)
Single 3.0V~3.6V power supply
Operating temperature :
Commercial : 0℃~70℃
All TTL compatible inputs and outputs
Fully static operation
Three state outputs
Data retention voltage : 2V (min.)
Package : 44-pin 400 mil TSOP-Ⅱ
GENERAL DESCRIPTION
The UT61L5128 is a 4,194,304-bit high-speed
CMOS static random access memory organized
as 524,288 words by 8 bits. It is fabricated using
high performance, high reliability CMOS
technology.
The UT61L5128 is designed for high-speed
system applications. It is particularly suited for use
in high-density high-speed system applications.
The UT61L5128 operates from a single 3.0V~3.6V
power supply and all inputs and outputs are fully
TTL compatible.
PIN CONFIGURATION
FUNCTIONAL BLOCK DIAGRAM
A0-A18
Vcc
Vss
DECODER
512K X 8
MEMORY
ARRAY
I/O1-I/O8
I/O DATA
CIRCUIT
COLUMN I/O
CE
OE
CONTROL
CIRCUIT
WE
PIN DESCRIPTION
SYMBOL
A0 - A18
I/O1 - I/O8
CE
WE
OE
VCC
VSS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
NC
1
44
NC
NC
2
43
NC
A0
3
42
NC
A1
4
41
A18
A2
5
A3
6
A4
7
CE
8
40
A17
39
A16
38
A15
37
OE
I/O1
9
36
I/O8
I/O2
10
35
I/O7
Vcc 11 UT61L5128 34 Vss
Vss
12
33
Vcc
I/O3
13
32
I/O6
I/O4
14
31
I/O5
WE
15
A5
16
A6
17
A7
18
A8
19
A9
20
NC
21
NC
22
30
A14
29
A13
28
A12
27
A11
26
A10
25
NC
24
NC
23
NC
TSOP-II
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
P80061
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