SMTPB120 Просмотр технического описания (PDF) - Galaxy Semi-Conductor
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SMTPB120 Datasheet PDF : 4 Pages
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BL GALAXY ELECTRICAL
SMTPB---SERIES
ABSOLUTE MAXIMUM RATINGS (TA=25 )
Symbol
P
Ipp
ITSM
I2t
dV/dt
Tstg
Tj
TL
P a ra m e te r
Power dissipation on infinite heatsink
Peak pulse current
Non repetitive surge peak on-state current
Tamb=50
10/1000 s
8/20 s
2/10 s
tp=20ms
I2t vallue for fusing
tp=20ms
Critical rate of rise of off-state voltage
VRM
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s at 5mm form case
Value
5.0
100
150
500
50
25
5
-55to+150
150
230
Unit
W
A
A
A2s
kV/µS
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-l)
Rth(j-a)
Junction to leads (Llead=10m m )
Junction to am bient on printed circuit (Llead=10m m )
Value
20
75
Unlt
/W
/W
Type
SMTPB62
SMTPB68
SMTPB100
SMTPB120
SMTPB130
SMTPB180
SMTPB200
SMTPB220
SMTPB240
SMTPB270
IRM @ VRM
max.
A
V
2
56
2
61
2
90
2
108
2
117
2
162
2
180
2
198
2
216
2
243
VR @ IR
min.
note1
V
µA
62
50
68
50
100
50
120
50
130
50
180
50
200
50
220
50
240
50
270
50
VBO @ IBO
max.
note2
V
mA
82
800
90
800
133
800
160
800
173
800
240
800
267
800
293
800
320
800
360
800
IH
min.
note3
mA
150
150
150
150
150
150
150
150
150
150
C
max.
note4
PF
300
300
200
200
200
200
200
200
200
200
ELECTRICAL CHARACTERISTICS (TA=25 )
I
I PP
I BO
IH
IR
I RM
V
VRM
V V BR
BO
Note1:IR measured at VR guarantees VBRmin≥VR
Note3: See test circuit2.
Symbol
P a ra m e te r
VRM Stand-off voltage
IRM Leakage current at stand-off voltage
VR Continuous reverse voltage
VBR Breakdown voltage
VBO Breakover voltage
IH Holding current
IBO Breakover current
IPP Peak pulse current
C Capacitance
Note 2:Measured at 50Hz(1 cycle)-See test circuit 1. www.galaxycn.com
Note4: VR=1V,F=1MHz,refer to fig.3 for C versus VR.
Document Number 0286006
BLGALAXY ELECTRICAL
2.
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