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SMBYT03 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
SMBYT03
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMBYT03 Datasheet PDF : 5 Pages
1 2 3 4 5
SMBYT03
Fig.1 : Low frequency power losses versus Fig.2 : Peak current versus form factor.
average current.
PF(av)(W)
5.5
5.0
=0.1
=0.2
4.5
=0.05
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
IF(av)(A)
0.0
0.0 0.5 1.0 1.5 2.0 2.5
=0.5 =1
T
=tp/T
tp
3.0 3.5 4.0
60 IM(A)
50
40
30
P=0.5W
20
P=1.5W
10
P=2.5W
T
IM
=tp/T
tp
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig.3 : Non repetitive surge peak forward current
versus overload duration.
Fig.4 : Relative variation of thermal impedance
junction to lead versus pulse duration.
IM(A)
20
18
16
14
12
10
8
6
4
2
0
0.001
0.01
Tc=40 oC
t(s)
0.1
IM
t
=0.5
K
Zth(j-c) (tp. )
1 K = Rth(j-c)
=0.5
=0.2
Tc=25 oC
Tc=55 oC
0.1 =0.1
Single pulse
0.01
1
10
0.001
0.01
tp(s)
0.1
T
=tp/T
1
tp
10
Fig.5 : Voltage drop versus forward current.
(Maximum values)
Fig.6 : Average current versus ambient
temperature. (duty cycle : 0.5)
VFM(V)
3.0
2.7
2.4 Tl=100 oC
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
0.01
0.1
I FM(A)
1
10
IF(av)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)
=0.5
T
2.5
2.0
1.5
Rth(j-a)=65 o C/W
1cm2 Cu
=tp/T
tp
1.0
0.5
Tamb(oC)
0.0
50
0 20 40 60 80 100 120 140 160
3/5

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