SMBYT01 Просмотр технического описания (PDF) - STMicroelectronics

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SMBYT01

FAST RECOVERY RECTIFIER DIODES

STMicroelectronics 

SMBYT01

STATIC ELECTRICAL CHARACTERISTICS

Symbol

VF * Tj = 25°C

IR **

Tj = 100°C

Tj = 25°C

Tj = 100°C

Pulse test : * tp = 380 µs, δ < 2 %

** tp = 5 ms, δ < 2 %

Test Conditions

IF = 1 A

VR = VRRM

Min. Typ. Max. Unit

1.5 V

1.05 1.4

10 µA

0.1 0.3 mA

RECOVERY CHARACTERISTICS

Symbol

trr

Tj = 25°C

Test Conditions

IF = 0.5A

IR = 1A

Irr = 0.25A

IF = 1A

VR = 30V

dIF/dt = -15A/µs

Min. Typ. Max. Unit

25 ns

60

TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance)

Symbol

Test Conditions

tIRM

VCC = 200V

IRM

Tj = 100°C

IF = 1A

Lp ≤ 0.05µH

dIF/dt = -50A/µs

To evaluate the conduction losses use the following equation :

P = 1.1 x IF(AV) + 0.25 x IF2(RMS)

Min. Typ. Max. Unit

35 50 ns

1.5 2

A

Voltage (V)

400

Marking

B4

Laser marking

Logo indicates cathode

2/5

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